Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

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	Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
	Xu B; Ye XL
刊名	applied surface science
	2000
卷号	167 期号:3-4 页码:191-196
关键词	self-assembled quantum dots molecular beam epitaxy high index MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY QUANTUM DOTS ISLANDS INP(001) INGAAS
ISSN号	0169-4332
通讯作者	li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the effects of inp substrate orientations on self-assembled inas quantum dots (qds) have been investigated by molecular beam epitaxy (mbe). a comparison between atomic force microscopy (afm) and photoluminescence (pl) spectra shows that a high density of smaller inas islands can be obtained by using such high index substrates. on the other hand, by introducing a lattice-matched underlying in0.52al0.24ga0.24as layer, the inas qds can be much more uniform in size and have a great improvement in pl properties. more importantly, 1.55-mu m luminescence at room temperature (rt) can be realized in inas qds deposited on (001) inp substrate with underlying in0.52al0.24ga0.24as layer. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12438]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL. Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates[J]. applied surface science,2000,167(3-4):191-196.
APA	Xu B,&Ye XL.(2000).Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates.applied surface science,167(3-4),191-196.
MLA	Xu B,et al."Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates".applied surface science 167.3-4(2000):191-196.