Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE

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	Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE
	Zhu QS ; Matsushima H ; Hiramatsu K ; Sawaki N
刊名	applied surface science
	2000
卷号	167 期号:3-4 页码:149-151
关键词	CHEMICAL VAPOR-DEPOSITION AIN BUFFER LAYER GROWTH FACETS WIRES MOCVD
ISSN号	0169-4332
通讯作者	zhu qs,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	three-dimensional gan pyramids have been successfully obtained on submicron dot-patterned (0001) sapphire substrates by using the selective metalorganic vapor phase epitaxy (movpe) technique. the dot-pattern is a hexagon arranged with a 0.5-mu m width and 1.0-mu m spacing. the gan structure comprises a hexagonal pyramid covered with six {1 (1) over bar 01} pyramidal facets on the side of a hexagonal pyramid having a (0001) facet on the top. cathodoluminescence (cl) measurement was carried our. on the hexagonal pyramid at low temperature. two distinct spectra were observed to occur at about 359 and 329 nm. the higher energy is thought to be related to gan dot, and the lower one is due to gan dot band edge emission. the intensities of the two spectra were investigated as a function of temperature in the range of 135-150 k. (c) 2000 published by elsevier science b.v.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12436]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu QS,Matsushima H,Hiramatsu K,et al. Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE[J]. applied surface science,2000,167(3-4):149-151.
APA	Zhu QS,Matsushima H,Hiramatsu K,&Sawaki N.(2000).Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE.applied surface science,167(3-4),149-151.
MLA	Zhu QS,et al."Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE".applied surface science 167.3-4(2000):149-151.