Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces

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	Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces
	Shen WZ ; Jiang LF ; Yu G ; Lai ZY ; Wang XG ; Shen SC ; Cao X
刊名	journal of applied physics
	2001
卷号	90 期号:10 页码:5444-5446
关键词	FAR-INFRARED DETECTORS SI-DOPED GAAS PHOTOLUMINESCENCE LAYERS
ISSN号	0021-8979
通讯作者	shen wz,shanghai jiao tong univ,dept phys,lab condensed matter spect & optoelect phys,1954 hua shan rd,shanghai 200030,peoples r china.
中文摘要	in this communication, we have carried out a detailed investigation of radiative recombination in n-gaas homojunction far-infrared detector structures with multilayer emitter (n(+))-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. the observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. a photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. (c) 2001 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12050]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shen WZ,Jiang LF,Yu G,et al. Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces[J]. journal of applied physics,2001,90(10):5444-5446.
APA	Shen WZ.,Jiang LF.,Yu G.,Lai ZY.,Wang XG.,...&Cao X.(2001).Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces.journal of applied physics,90(10),5444-5446.
MLA	Shen WZ,et al."Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces".journal of applied physics 90.10(2001):5444-5446.