Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

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	Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition
	Sun XL ; Yang H ; Zhu JJ ; Wang YT ; Chen Y ; Li GH ; Wang ZG
刊名	physica status solidi a-applied research
	2001
卷号	188 期号:2 页码:653-657
关键词	GALLIUM NITRIDE LUMINESCENCE BULK
ISSN号	0031-8965
通讯作者	sun xl,ohio state univ,dept elect engn,columbus,oh 43210 usa.
中文摘要	in this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in gan films. two gan samples with and without 3 min nitridation process were investigated by photoluminescence (pl) spectroscopy in the temperature range of 12-300 k and double-crystal x-ray diffraction (xrd). in the 12 k pl spectra of the gan sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 ev were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. in the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 ev were observed at 12 k, no peak related to stacking faults. xrd results at different reflections showed that there are more stacking faults in the samples without nitridation.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12020]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun XL,Yang H,Zhu JJ,et al. Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition[J]. physica status solidi a-applied research,2001,188(2):653-657.
APA	Sun XL.,Yang H.,Zhu JJ.,Wang YT.,Chen Y.,...&Wang ZG.(2001).Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition.physica status solidi a-applied research,188(2),653-657.
MLA	Sun XL,et al."Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition".physica status solidi a-applied research 188.2(2001):653-657.