(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw

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	(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw
	Yang JL ; Chen NF ; Liu ZK ; Yang SY ; Chai CL ; Liao MY ; He HJ
刊名	journal of crystal growth
	2002
卷号	234 期号:2-3 页码:359-363
关键词	X-ray diffraction ion beam epitaxy gallium arsenide FILMS FE
ISSN号	0022-0248
通讯作者	yang jl,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the (ga,mn,as) compounds were obtained by the implantation of mn ions into semi-insulating gaas substrate with mass-analyzed low energy dual ion beam deposition technique. auger electron spectroscopy depth profile of a typical sample grown at the substrate temperature of 250degreesc showed that the mn ions were successfully implanted into gaas substrate with the implantation depth of 160 nm. x-ray diffraction was employed for the structural analyses of all samples. the experimental results were greatly affected by the substrate temperature. ga5.2mn was obtained in the sample grown at the substrate temperature of 250degreesc. ga5.2mn, ga5mn8 and mn3ga were obtained in the sample grown at the substrate temperature of 400degreesc. however, there is no new phase in the sample grown at the substrate temperature of 200degreesc. the sample grown at 400degreesc was annealed at 840degreesc. in this annealed sample mn3ga disappeared, ga5mn8 tended to disappear,ga5.2mn crystallized better and a new phase of mn2as was generated. (c) 2002 elsevier science b,v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12018]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang JL,Chen NF,Liu ZK,et al. (Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw[J]. journal of crystal growth,2002,234(2-3):359-363.
APA	Yang JL.,Chen NF.,Liu ZK.,Yang SY.,Chai CL.,...&He HJ.(2002).(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw.journal of crystal growth,234(2-3),359-363.
MLA	Yang JL,et al."(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw".journal of crystal growth 234.2-3(2002):359-363.