Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

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	Dephasing rate in an InAs/GaAs single-electron quantum dot qubit
	Pan LX ; Li SS ; Liu JL ; Niu ZC ; Feng SL ; Zheng HZ
刊名	science in china series a-mathematics physics astronomy
	2002
卷号	45 期号:5 页码:666-670
关键词	quantum dot quantum computing decoherence COMPUTATION LOGIC
ISSN号	1006-9283
通讯作者	li ss,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	we have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of inas/gaas quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. moreover, static electric field is found to efficiently prolong decoherence time. as a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kv/cm if only vacuum fluctuation is taken as the main source for decoherence. our calculated results are useful for guiding the solid-state implementation of quantum computing.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11796]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan LX,Li SS,Liu JL,et al. Dephasing rate in an InAs/GaAs single-electron quantum dot qubit[J]. science in china series a-mathematics physics astronomy,2002,45(5):666-670.
APA	Pan LX,Li SS,Liu JL,Niu ZC,Feng SL,&Zheng HZ.(2002).Dephasing rate in an InAs/GaAs single-electron quantum dot qubit.science in china series a-mathematics physics astronomy,45(5),666-670.
MLA	Pan LX,et al."Dephasing rate in an InAs/GaAs single-electron quantum dot qubit".science in china series a-mathematics physics astronomy 45.5(2002):666-670.