Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy
	Han PD
刊名	solid-state electronics
	2002
卷号	46 期号:12 页码:2069-2074
关键词	nitrogen vacancy scattering GaN mobility MOCVD N-TYPE GAN NITRIDE FILMS
ISSN号	0038-1101
通讯作者	chen z,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	electron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type gan grown by metal-organic vapor phase epitaxy. two assumptions were made for this potential for the nitrogen vacancy (1) it acts in a short range, and (2) does not diverge at the vacancy core. according to the above assumptions, a general expression to describe the scattering potential u(r) = - u-0 exp[- (r/beta)(n)], (n = 1, 2,...,infinity) was constructed, where beta is the potential well width. the mobilities for n = 1, 2, and infinity were calculated based on this equation, corresponding to the simple exponential, gaussian and square well scattering potentials, respectively. in the limiting case of kbeta << 1 (where k is the wave vector), all of the mobilities calculated for n = 1, 2, and infinity showed a same result but different prefactor. such difference was discussed in terms of the potential tail and was found that all of the calculated mobilities have t-1/2 temperature and beta(-6) well width dependences. a mobility taking account of a spatially complicate scattering potential was studied and the same temperature dependence was also found. a best fit between the calculated results and experimental data was obtained by taking account of the nitrogen vacancy scattering. (c) 2002 elsevier science ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11720]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy[J]. solid-state electronics,2002,46(12):2069-2074.
APA	Han PD.(2002).Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy.solid-state electronics,46(12),2069-2074.
MLA	Han PD."Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy".solid-state electronics 46.12(2002):2069-2074.