Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

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	Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
	Wu J ; Zeng YP ; Cui LJ ; Zhu ZP ; Wang BX ; Wang ZG
刊名	international journal of modern physics b
	2002
卷号	16 期号:28-29 页码:4423-4426
关键词	INP(001) EPITAXY GAAS
ISSN号	0217-9792
通讯作者	wu j,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	diagonal self-assembled inas quantum wire (qwr) arrays with the stacked inas/in0.52al0.48as structure are grown on inp substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. both the molecular beam epitaxy (mbe) and migration enhanced epitaxy (mee) techniques are employed. transmission electron microscopy reveals that whether a diagonal inas qwr array of the stacked inas/inalas is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. asymmetry in the diagonal mee-grown inas qwr array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the inas quantum wires.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11718]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu J,Zeng YP,Cui LJ,et al. Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate[J]. international journal of modern physics b,2002,16(28-29):4423-4426.
APA	Wu J,Zeng YP,Cui LJ,Zhu ZP,Wang BX,&Wang ZG.(2002).Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate.international journal of modern physics b,16(28-29),4423-4426.
MLA	Wu J,et al."Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate".international journal of modern physics b 16.28-29(2002):4423-4426.