Study on the reverse characteristics of Ti/6H-SiC Schottky contacts

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	Study on the reverse characteristics of Ti/6H-SiC Schottky contacts
	Shang YC ; Liu ZL ; Wang SR
刊名	acta physica sinica
	2003
卷号	52 期号:1 页码:211-216
关键词	SiC Schottky contacts reverse characteristics tunneling current ELECTRICAL CHARACTERISTICS INHOMOGENEITIES DIODES
ISSN号	1000-3290
通讯作者	shang yc,chinese acad sci,microelect r&d ctr,inst semicond,beijing 100083,peoples r china.
中文摘要	the reverse i(v) measurement and analytic calculation of the electron transport across a ti/6h-sic schottky barrier are presented. based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across ti/sic interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a wkb calculation of the tunneling probability through a reverse biased schottky barrier. this model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. the fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. it is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a sic schottky contacts in a normal working condition.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11660]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shang YC,Liu ZL,Wang SR. Study on the reverse characteristics of Ti/6H-SiC Schottky contacts[J]. acta physica sinica,2003,52(1):211-216.
APA	Shang YC,Liu ZL,&Wang SR.(2003).Study on the reverse characteristics of Ti/6H-SiC Schottky contacts.acta physica sinica,52(1),211-216.
MLA	Shang YC,et al."Study on the reverse characteristics of Ti/6H-SiC Schottky contacts".acta physica sinica 52.1(2003):211-216.