Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

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	Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
	Li Q ; Fang ZL ; Xu SJ ; Li GH ; Xie MH ; Tong SY ; Zhang XH ; Liu W ; Chua SJ
刊名	physica status solidi b-basic research
	2003
卷号	235 期号:2 页码:427-431
关键词	PIEZOELECTRIC FIELD PHOTOLUMINESCENCE TEMPERATURE
ISSN号	0370-1972
通讯作者	xu sj,univ hong kong,dept phys,pokfulam rd,hong kong,hong kong,peoples r china.
中文摘要	excitation-power dependence of hydrostatic pressure coefficients (de/dp) of inxga1-xn/inyga1-yn multiple quantum wells is reported. when the excitation power increases from 1.0 to 33 mw, de/dp increases from 26.9 to 33.8 mev/gpa, which is an increase by 25%. a saturation behavior of de/dp with the excitation power is observed. the increment of de/dp with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11652]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Q,Fang ZL,Xu SJ,et al. Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells[J]. physica status solidi b-basic research,2003,235(2):427-431.
APA	Li Q.,Fang ZL.,Xu SJ.,Li GH.,Xie MH.,...&Chua SJ.(2003).Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells.physica status solidi b-basic research,235(2),427-431.
MLA	Li Q,et al."Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells".physica status solidi b-basic research 235.2(2003):427-431.