Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

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	Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy
	Li GH ; Fang ZL ; Su FH ; Ma BS ; Ding K ; Han HX ; Sou IK ; Ge WK
刊名	physica status solidi b-basic research
	2003
卷号	235 期号:2 页码:401-406
关键词	OPTICAL-ABSORPTION ZNS-TE TRANSITION EDGE
ISSN号	0370-1972
通讯作者	li gh,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	the photoluminescence from zns1-xtex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 gpa. two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated te isoelectronic impurities (te-1 centers) and te pairs (te-2 centers), respectively. only the te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. the emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the te-n (n greater than or equal to 3) cluster centers. the pressure coefficient of the te-1 related peak is 89(4) mev/gpa, about 40% larger than that of the band gap of zns. on the other hand, the pressure coefficient of the te-2 related emissions is only 52(4) mev/gpa, about 15% smaller than that of the zns band gap. a simple koster-slater model has been used to explain the different pressure behavior of the te-1 and te-2 centers. the pressure coefficient of the te-3 centers is 62(2) mev/gpa. then the pressure coefficients of the te-n centers decrease rapidly with further increasing te composition.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11650]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li GH,Fang ZL,Su FH,et al. Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy[J]. physica status solidi b-basic research,2003,235(2):401-406.
APA	Li GH.,Fang ZL.,Su FH.,Ma BS.,Ding K.,...&Ge WK.(2003).Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy.physica status solidi b-basic research,235(2),401-406.
MLA	Li GH,et al."Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy".physica status solidi b-basic research 235.2(2003):401-406.