Metal-semiconductor-metal ultraviolet photodetector based on GaN

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	Metal-semiconductor-metal ultraviolet photodetector based on GaN
	Wang J ; Zhao DA ; Liu ZS ; Feng G ; Zhu JJ ; Shen XM ; Zhang BS ; Yang H
刊名	science in china series g-physics astronomy
	2003
卷号	46 期号:2 页码:198-203
关键词	GaN MSM ultraviolet photodetector responsivity LOW-NOISE DETECTORS PHOTODIODES SI(111) GAIN
ISSN号	1672-1799
通讯作者	wang j,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要	a metal-semiconductor-metal (msm) ultraviolet photodetector has been fabricated using unintentionally doped n-gan films grown on sapphire substrates. its dark current, photocurrent under the illumination with lambda = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. the dark current of the photodetector is 1.03 na under 5 v bias, and is 15.3 na under 10 v bias. a maximum responsivity of 0.166 a/w has been achieved under the illumination with lambda = 366 nm light and 15 v bias. it exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. its responsivity under the illumination with lambda = 360 nm light increases when the bias voltage increases.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11604]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang J,Zhao DA,Liu ZS,et al. Metal-semiconductor-metal ultraviolet photodetector based on GaN[J]. science in china series g-physics astronomy,2003,46(2):198-203.
APA	Wang J.,Zhao DA.,Liu ZS.,Feng G.,Zhu JJ.,...&Yang H.(2003).Metal-semiconductor-metal ultraviolet photodetector based on GaN.science in china series g-physics astronomy,46(2),198-203.
MLA	Wang J,et al."Metal-semiconductor-metal ultraviolet photodetector based on GaN".science in china series g-physics astronomy 46.2(2003):198-203.