(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

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	(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition
	Zhang FQ ; Chen NF ; Liu XG ; Liu ZK ; Yang SY ; Cha CL
刊名	journal of crystal growth
	2003
卷号	252 期号:1-3 页码:202-207
关键词	X-ray diffraction ion beam epitaxy semiconducting III-V materials DILUTED MAGNETIC SEMICONDUCTORS IMPLANTED GAN FERROMAGNETISM INJECTION GAAS MN
ISSN号	0022-0248
通讯作者	zhang fq,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the (ga,mn,n) samples were grown by the implantation of low-energy mn ions into gan/al2o3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the mn ions reach deeper in samples with higher substrate temperatures. clear x-ray diffraction peak from (ga,mn)n is observed in samples grown at the higher substrate temperature. it indicates that under optimized substrate temperature and annealing conditions the solid solution (ga,mn)n phase in samples was formed with the same lattice structure as gan and different lattice constant. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11600]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang FQ,Chen NF,Liu XG,et al. (Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition[J]. journal of crystal growth,2003,252(1-3):202-207.
APA	Zhang FQ,Chen NF,Liu XG,Liu ZK,Yang SY,&Cha CL.(2003).(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition.journal of crystal growth,252(1-3),202-207.
MLA	Zhang FQ,et al."(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition".journal of crystal growth 252.1-3(2003):202-207.