Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots

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	Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots
	Xu B
刊名	journal of applied physics
	2003
卷号	93 期号:11 页码:8898-8902
关键词	SCANNING-TUNNELING-MICROSCOPY GROWTH ISLANDS NM
ISSN号	0021-8979
通讯作者	he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the structure and optical properties of in(ga)as with the introduction of ingaalas or inalas seed dot layers are investigated. the area density and size homogeneity of the upper ingaas dots are efficiently improved by the introduction of a buried layer of high-density dots. our explanation for the realization of high density and size homogeneity dots is presented. when the gaas spacer layer is too thin to cover the seed dots, the upper dots exhibit some optical properties like those of a quantum well. by analyzing the growth dynamics, we refer to this kind of dot as an empty-core dot. (c) 2003 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11556]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots[J]. journal of applied physics,2003,93(11):8898-8902.
APA	Xu B.(2003).Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots.journal of applied physics,93(11),8898-8902.
MLA	Xu B."Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots".journal of applied physics 93.11(2003):8898-8902.