Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
Jin P; Li CM
刊名journal of crystal growth
2003
卷号253期号:1-4页码:198-202
关键词lattice-mismatch microstructure radiation X-ray diffraction molecular beam epitaxy infrared devices quantum cascade laser MU-M
ISSN号0022-0248
通讯作者li cm,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要double x-ray diffraction has been used to investigate ingaas/inalas quantum cascade (qc) laser grown on inp substrate by molecule beam epitaxy, by means of which, excellent lattice matching, the interface smoothness, the uniformity of the thickness and the composition of the epilayer are disclosed. what is more, these results are in good agreement with designed value. the largest lattice mismatch is within 0.18% and the intersubband absorption wavelength between two quantized energy levels is achieved at about lambda = 5.1 mum at room temperature. at 77 k, the threshold density of the qc laser is less than 2.6 ka/cm(2) when the repetition rate is 5 khz and the duty cycle is 1%. (c) 2003 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11548]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Jin P,Li CM. Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser[J]. journal of crystal growth,2003,253(1-4):198-202.
APA Jin P,&Li CM.(2003).Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser.journal of crystal growth,253(1-4),198-202.
MLA Jin P,et al."Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser".journal of crystal growth 253.1-4(2003):198-202.
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