Magnetic properties of silicon doped with gadolinium

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	Magnetic properties of silicon doped with gadolinium
	Zhou JP ; Chen NF ; Song SL ; Chai CL ; Yang SY ; Liu ZK ; Lin LY
刊名	applied physics a-materials science & processing
	2003
卷号	77 期号:3-4 页码:599-602
关键词	METAL-INSULATOR-TRANSITION BEAM EPITAXY TECHNIQUE SEMICONDUCTING SILICIDES INDUCED FERROMAGNETISM FILMS MAGNETORESISTANCE TEMPERATURE ALLOYS
ISSN号	0947-8396
通讯作者	zhou jp,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	the magnetic semiconductor gdxsi1-x was prepared by low-energy dual ion-beam epitaxy. gdxsi1-x shows excellent magnetic properties at room temperature. a high magnetic moment of 10 mu(b) per gd atom is observed. the high atomic magnetic moment is interpreted as being a result of the rkky mechanism. the indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11506]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou JP,Chen NF,Song SL,et al. Magnetic properties of silicon doped with gadolinium[J]. applied physics a-materials science & processing,2003,77(3-4):599-602.
APA	Zhou JP.,Chen NF.,Song SL.,Chai CL.,Yang SY.,...&Lin LY.(2003).Magnetic properties of silicon doped with gadolinium.applied physics a-materials science & processing,77(3-4),599-602.
MLA	Zhou JP,et al."Magnetic properties of silicon doped with gadolinium".applied physics a-materials science & processing 77.3-4(2003):599-602.