Selectively excited photoluminescence of GaAs1-xNx single quantum wells

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	Selectively excited photoluminescence of GaAs1-xNx single quantum wells
	Tan PH
刊名	journal of applied physics
	2003
卷号	94 期号:8 页码:4863-4865
关键词	MOLECULAR-BEAM EPITAXY GAASN ALLOYS NITROGEN LUMINESCENCE PRESSURE STATES ENERGY
ISSN号	0021-8979
通讯作者	tan ph,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	gaasn bulk and gaasn/gaas single quantum wells grown by molecular beam epitaxy are studied by selectively excited photoluminescence (pl) measurements. a significant difference is observed in the pl spectra when the excitation energy is set below or above the band gap of gaas for the gaasn/gaas quantum well samples, while the spectral features of gaasn bulk are not sensitive to the excitation energy. the observed difference in pl of the gaasn/gaas quantum well samples is attributed to the exciton localization effect at the gaasn/gaas interfaces, which is directly correlated with the transfer and trap processes of the photogenerated carriers from gaas into gaasn through the heterointerfaces. this interface-related exciton localization effect can be greatly reduced by a rapid thermal annealing process, making the pl be dominated by the intrinsic delocalized transition in gaasn/gaas. (c) 2003 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11428]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan PH. Selectively excited photoluminescence of GaAs1-xNx single quantum wells[J]. journal of applied physics,2003,94(8):4863-4865.
APA	Tan PH.(2003).Selectively excited photoluminescence of GaAs1-xNx single quantum wells.journal of applied physics,94(8),4863-4865.
MLA	Tan PH."Selectively excited photoluminescence of GaAs1-xNx single quantum wells".journal of applied physics 94.8(2003):4863-4865.