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	Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
	Chen J ; Wang JF ; Zhang JC ; Wang H ; Huang Y ; Wang YT ; Yang H ; Jia QJ
刊名	high energy physics and nuclear physics-chinese edition
	2005
卷号	29期号:suppl.s页码:37-39
关键词	GaN metalorganic chemical vapor deposition (MOCVD) epitaxy lateral overgrowth stacking faults synchrotron radiation X-ray diffraction (XRD) pole figure WURTZITE GAN LUMINESCENCE
ISSN号	0254-3052
通讯作者	chen, j, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: jchen@red.semi.ac.cn
中文摘要	by means of low temperature photoluminescence and synchrotron radiation x-ray diffraction, existence of stacking faults has been determined in epitaxy lateral overgrowth gan by metalorganic chemical vapor deposition.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10918]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen J,Wang JF,Zhang JC,et al. Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation[J]. high energy physics and nuclear physics-chinese edition,2005,29(suppl.s):37-39.
APA	Chen J.,Wang JF.,Zhang JC.,Wang H.,Huang Y.,...&Jia QJ.(2005).Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation.high energy physics and nuclear physics-chinese edition,29(suppl.s),37-39.
MLA	Chen J,et al."Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation".high energy physics and nuclear physics-chinese edition 29.suppl.s(2005):37-39.

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