Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

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	Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
	Zhang CG ; Chen WD ; Bian LF ; Song SF ; Hsu CC
刊名	applied surface science
	2006
卷号	252 期号:6 页码:2153-2158
关键词	gallium nitride films gallium oxide carbonized-reaction NITRIDE THIN-FILMS TEMPERATURE SUBSTRATE SI(111)
ISSN号	0169-4332
通讯作者	zhang, cg, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china. e-mail: zhangcg@semi.ac.cn
中文摘要	radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality gan films on al2o3(0 0 0 1) substrates. the sputtered ga2o3 film doped with carbon was used as the precursor for gan growth. x-ray diffraction (xrd) pattern reveals that the film consists of hexagonal wurtzite gan. x-ray photoelectron spectroscopy (xps) shows that no oxygen can be detected. electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline gan films were successfully grown on al2o3(0 0 0 1) substrates. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10876]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang CG,Chen WD,Bian LF,et al. Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique[J]. applied surface science,2006,252(6):2153-2158.
APA	Zhang CG,Chen WD,Bian LF,Song SF,&Hsu CC.(2006).Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique.applied surface science,252(6),2153-2158.
MLA	Zhang CG,et al."Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique".applied surface science 252.6(2006):2153-2158.