A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
	Zhang RY ; Wang W ; Zhou F ; Wang BJ ; Wang LF ; Bian J ; Zhao LJ ; Zhu HL ; Jian SS
刊名	semiconductor science and technology
	2006
卷号	21 期号:3 页码:306-310
关键词	LINEWIDTH ENHANCEMENT FACTOR THRESHOLD CURRENT-DENSITY DIFFERENTIAL GAIN MQW LASERS
ISSN号	0268-1242
通讯作者	zhang, ry, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	1.5 mu m n-type ingaasp/ingaasp modulation-doped multiple quantum well (md-mqw) dfb lasers have been fabricated successfully by low pressure metal organic chemical vapour deposition (lp-mocvd) technology. the experimental results indicate that n-type md-mqws can effectively reduce the threshold current compared with conventional multiple quantum well dfb lasers. theoretical analysis indicates that such an effect is due to the much smaller absorption loss and lower auger recombination, compared with that in an undoped mqw structure. moreover, the introduction of n-type dopant of suitable levels of concentration in the barrier layers enhances the dynamic characteristics of dfb lasers, due to a coupling between the adjacent quantum well layers and tunnelling-assisted injection, which can reduce the relatively long capture time and increase the effective differential gain 1/x dg/dn .
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10726]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang RY,Wang W,Zhou F,et al. A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD[J]. semiconductor science and technology,2006,21(3):306-310.
APA	Zhang RY.,Wang W.,Zhou F.,Wang BJ.,Wang LF.,...&Jian SS.(2006).A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD.semiconductor science and technology,21(3),306-310.
MLA	Zhang RY,et al."A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD".semiconductor science and technology 21.3(2006):306-310.