1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

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	1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots
	Yu J ; Kasper E ; Oehme M
刊名	thin solid films
	2006
卷号	508 期号:1-2 页码:396-398
关键词	SiGe photodiode MBE quantum dots PHOTODETECTORS OPERATION
ISSN号	0040-6090
通讯作者	kasper, e, univ stuttgart, inst halbleitertech, pfaffenwaldring 47, d-70569 stuttgart, germany. e-mail: kasper@iht.uni-stuttgart.de
中文摘要	self-assembly ge quantum dots (qd) on si and si/ge mutli-quantum-wells (mqw) are grown by mbe. the island size and island density was investigated by atomics force microscopy. ten-layer and twenty-layer mqw were selected for photodiode device fabrication. in photoluminescence (pl), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer mqw which had less defects than the 20-layer sample. resonant cavity enhanced (rce) photodiodes were fabricated by bonding on a soi wafer. selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10670]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu J,Kasper E,Oehme M. 1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots[J]. thin solid films,2006,508(1-2):396-398.
APA	Yu J,Kasper E,&Oehme M.(2006).1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots.thin solid films,508(1-2),396-398.
MLA	Yu J,et al."1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots".thin solid films 508.1-2(2006):396-398.