Strong in-plane optical anisotropy of asymmetric (001) quantum wells

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	Strong in-plane optical anisotropy of asymmetric (001) quantum wells
	Xu B; Ye XL
刊名	journal of applied physics
	2006
卷号	99 期号:9 页码:art.no.096102
关键词	HETEROSTRUCTURES SPECTROSCOPY INTERFACES
ISSN号	0021-8979
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn
中文摘要	it is well known that asymmetry in the (001) direction can induce in-plane optical anisotropy (ipoa) in (001) quantum wells (qws). in this letter, asymmetry is introduced in (001) gaas/algaas qws by inserting 1 ml (monolayer) of inas or alas at interfaces. strong ipoa, which is comparable to that in the ingaas/inp qws with no common atom, is observed in the asymmetric gaas/algaas qw by reflectance difference spectroscopy. (c) 2006 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10662]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL. Strong in-plane optical anisotropy of asymmetric (001) quantum wells[J]. journal of applied physics,2006,99(9):art.no.096102.
APA	Xu B,&Ye XL.(2006).Strong in-plane optical anisotropy of asymmetric (001) quantum wells.journal of applied physics,99(9),art.no.096102.
MLA	Xu B,et al."Strong in-plane optical anisotropy of asymmetric (001) quantum wells".journal of applied physics 99.9(2006):art.no.096102.