High-power AlGaInP laser diodes with current-injection-free region near the laser facet

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High-power AlGaInP laser diodes with current-injection-free region near the laser facet
	Xu Y ; Li YZ ; Gan QQ ; Cao Q ; Song GF ; Guo L ; Chen LH
刊名	optical engineering
	2006
卷号	45 期号:3 页码:art.no.034205
关键词	laser diodes AlGaInP ridge waveguide current-injection-free region OPERATION
ISSN号	0091-3286
通讯作者	xu, y, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: xuyun@red.semi.ac.cn
中文摘要	a high-power algainp laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (mocvd) using the (100) direction n-gaas substrates with a misorientation of 15 deg toward the (011) direction. the maximum continuous wave output power is about 90 mw for the traditional structure. in comparison, the maximum output power is enhanced by about 67%, and achieves 150 mw for lds with current-infection-free regions. the fundamental transverse-mode operation is obtained up to 70 mw. output characteristics at high temperatures are also improved greatly for an ld with a current-injection-free region, and the highest operation temperature is 70 c at 50 mw without kink. the threshold current is about 33 ma, the operation current and the slope efficiency at 100 mw are 120 ma and 0.9 mw/ma, respectively. the lasing wavelength is 658.4 nm at room-temperature 50 mw. (c) 2006 society of photo-optical instrumentation engineers.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10656]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu Y,Li YZ,Gan QQ,et al. High-power AlGaInP laser diodes with current-injection-free region near the laser facet[J]. optical engineering,2006,45(3):art.no.034205.
APA	Xu Y.,Li YZ.,Gan QQ.,Cao Q.,Song GF.,...&Chen LH.(2006).High-power AlGaInP laser diodes with current-injection-free region near the laser facet.optical engineering,45(3),art.no.034205.
MLA	Xu Y,et al."High-power AlGaInP laser diodes with current-injection-free region near the laser facet".optical engineering 45.3(2006):art.no.034205.