A small signal equivalent circuit model for resonant tunnelling diode
Ma L (Ma Long) ; Huang YL (Huang Ying-Long) ; Zhang Y (Zhang Yang) ; Wang LC (Wang Liang-Chen) ; Yang FH (Yang Fu-Hua) ; Zeng YP (Zeng Yi-Ping)
刊名chinese physics letters
2006
卷号23期号:8页码:2292-2295
关键词TRANSISTORS POWER
ISSN号0256-307x
通讯作者ma, l, chinese acad sci, inst semicond, engn res ctr semicond integrat technol, beijing 100083, peoples r china. e-mail: malong@semi.ac.cn
中文摘要we report a resonant tunneling diode (rtd) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. the model is verified through the actual inas/in0.53ga0.47as/alas rtd fabricated on an inp substrate. model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of rtd current-voltage (i-v) characteristics. the electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunneling process, is also calculated to be 2.09 ps.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-04-11
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/10478]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Ma L ,Huang YL ,Zhang Y ,et al. A small signal equivalent circuit model for resonant tunnelling diode[J]. chinese physics letters,2006,23(8):2292-2295.
APA Ma L ,Huang YL ,Zhang Y ,Wang LC ,Yang FH ,&Zeng YP .(2006).A small signal equivalent circuit model for resonant tunnelling diode.chinese physics letters,23(8),2292-2295.
MLA Ma L ,et al."A small signal equivalent circuit model for resonant tunnelling diode".chinese physics letters 23.8(2006):2292-2295.
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