Characteristics of InGaN multiple quantum well blue-violet laser diodes
Li DY (Li Deyao) ; Zhang SM (Zhang Shuming) ; Wang JF (Wang Jianfeng) ; Chen J (Chen Jun) ; Chen LH (Chen Lianghui) ; Chong M (Chong Ming) ; Zhu JJ (Zhu Jianjun) ; Zhao DG (Zhao Degang) ; Liu ZS (Liu Zongshun) ; Yang H (Yang Hui) ; Liang JW (Liang Junwu)
刊名science in china series e-technological sciences
2006
卷号49期号:6页码:727-732
关键词metalorganic chemical vapor deposition (MOCVD) GaN-hased laser diodes multiple quantum well ridge waveguide threshold current ELECTRICAL-PROPERTIES GAN SUBSTRATE CONTACTS
ISSN号1006-9321
通讯作者li, dy, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: dyli@red.semi.ac.cn
中文摘要studies on ingan multiple quantum well blue-violet laser diodes have been reported. laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. triple-axis x-ray diffraction (taxrd) measurements show that the multiple quantum wells were high quality. ridge waveguide laser diodes were fabricated with cleaved facet mirrors. the laser diodes lase at room temperature under a pulsed current. a threshold current density of 3.3 ka/cm(2) and a characteristic temperature to of 145 k were observed for the laser diode.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-04-11
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/10244]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li DY ,Zhang SM ,Wang JF ,et al. Characteristics of InGaN multiple quantum well blue-violet laser diodes[J]. science in china series e-technological sciences,2006,49(6):727-732.
APA Li DY .,Zhang SM .,Wang JF .,Chen J .,Chen LH .,...&Liang JW .(2006).Characteristics of InGaN multiple quantum well blue-violet laser diodes.science in china series e-technological sciences,49(6),727-732.
MLA Li DY ,et al."Characteristics of InGaN multiple quantum well blue-violet laser diodes".science in china series e-technological sciences 49.6(2006):727-732.
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