A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate

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	A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate
	Jin P (Jin Peng) ; Pan SH (Pan S. H.) ; Li YG (Li Y. G.) ; Zhang CZ (Zhang C. Z.) ; Wang ZG (Wang Z. G.)
刊名	semiconductor science and technology
	2006
卷号	21 期号:10 页码:1467-1471
关键词	FRANZ-KELDYSH OSCILLATIONS DIFFERENTIAL PHOTOREFLECTANCE MODULATION SPECTROSCOPY FOURIER TRANSFORMATION INTERFACES SURFACE
ISSN号	0268-1242
通讯作者	jin, p, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: pengjin@red.semi.ac.cn
中文摘要	contactless electroreflectance (cer) and photoreflectance (pr) measurements have been performed on samples with the structure of an n-doped gaas epitaxial layer on a semi- insulating gaas substrate. modulated reflectance signals from the n-gaas surface and those from the n-gaas/si-gaas interface are superposed in pr spectra. for the case of cer measurement, however, franz-keldysh oscillations (fkos) from the interface, which are observed in pr spectra, cannot be detected. this discrepancy is attributed to different modulation mechanisms of cer and pr. in cer experiments, the electric field modulation cannot be added to the interfacial electric field because of the effective screening by the fast response of carriers across the interface. fkos from the interface without any perturbation by the surface signals are extracted by subtracting cer spectra from pr spectra.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10234]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P ,Pan SH ,Li YG ,et al. A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate[J]. semiconductor science and technology,2006,21(10):1467-1471.
APA	Jin P ,Pan SH ,Li YG ,Zhang CZ ,&Wang ZG .(2006).A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate.semiconductor science and technology,21(10),1467-1471.
MLA	Jin P ,et al."A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate".semiconductor science and technology 21.10(2006):1467-1471.