Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles

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	Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles
	Gai YQ(盖艳琴) ; Peng HW(彭浩为) ; Li JB(李京波)
刊名	journal of physical chemistry c
	2009
卷号	113 期号:52 页码:21506-21511
关键词	MULTIPLE EXCITON GENERATION AUGMENTED-WAVE METHOD 1ST-PRINCIPLES CALCULATIONS COLLOIDAL PBSE SURFACE PSEUDOPOTENTIALS NANOCRYSTALS RELAXATION INTERBAND
通讯作者	li, jb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail address: jbli@semi.ac.cn
合作状况	其它
学科主题	半导体物理
收录类别	SCI
资助信息	one-hundred talent plan of the chinese academy of sciences；national science fund for distinguished young scholars 60925016；national high technology research and development program of china 2009aa034101
语种	英语
公开日期	2010-04-04
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10192]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gai YQ,Peng HW,Li JB. Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles[J]. journal of physical chemistry c,2009,113(52):21506-21511.
APA	Gai YQ,Peng HW,&Li JB.(2009).Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles.journal of physical chemistry c,113(52),21506-21511.
MLA	Gai YQ,et al."Electronic Properties of Nonstoichiometric PbSe Quantum Dots from First Principles".journal of physical chemistry c 113.52(2009):21506-21511.