Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

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	Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition
	Zhao, DG (Zhao, D. G.) ; Liu, ZS (Liu, Z. S.) ; Zhu, JJ (Zhu, J. J.) ; Zhang, SM (Zhang, S. M.) ; Jiang, DS (Jiang, D. S.) ; Yang, H (Yang, Hui) ; Liang, JW (Liang, J. W.) ; Li, XY (Li, X. Y.) ; Gong, HM (Gong, H. M.)
刊名	applied surface science
	2006
卷号	253 期号:5 页码:2452-2455
关键词	Al incorporation
ISSN号	issn: 0169-4332
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn
中文摘要	the effect of al incorporation on the algan growth by metalorganic chemical vapor deposition is investigated. with the increase of trimethylalluminum (tmal) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. an interesting phenomenon is that the growth rate of algan decrease with increasing tmal flux, which is opposite to the aln growth rate dependence on the tmal flux. all these effects are attributed to the different properties of at atoms due to the higher bond strength of al-n compared with ga-n, which lead to lower surface mobility and stronger competitive ability of al atoms during the growth. the enhancement of the surface mobility of al is especially important for improving the quality of algan. (c) 2006 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9712]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, DG ,Liu, ZS ,Zhu, JJ ,et al. Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition[J]. applied surface science,2006,253(5):2452-2455.
APA	Zhao, DG .,Liu, ZS .,Zhu, JJ .,Zhang, SM .,Jiang, DS .,...&Gong, HM .(2006).Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition.applied surface science,253(5),2452-2455.
MLA	Zhao, DG ,et al."Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition".applied surface science 253.5(2006):2452-2455.