Silicon light emitting devices in CMOS technology

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	Silicon light emitting devices in CMOS technology
	Chen HD (Chen Hong-Da) ; Liu HJ (Liu Hai-Jun) ; Liu JB (Liu Jin-Bin) ; Ming G (Ming Gu) ; Huang BJ (Huang Bei-Ju)
刊名	chinese physics letters
	2007
卷号	24 期号:1 页码:265-267
关键词	ELECTROLUMINESCENCE
ISSN号	issn: 0256-307x
通讯作者	chen, hd, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: hjliu@red.semi.ac.cn
中文摘要	two silicon light emitting devices with different structures are realized in standard 0.35 mu m complementary metal-oxide-semiconductor (cmos) technology. they operate in reverse breakdown mode and can be turned on at 8.3 v. output optical powers of 13.6 nw and 12.1 nw are measured at 10 v and 100 ma, respectively, and both the calculated light emission intensities are more than 1 mw/cm-2. the optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm..
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9710]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen HD ,Liu HJ ,Liu JB ,et al. Silicon light emitting devices in CMOS technology[J]. chinese physics letters,2007,24(1):265-267.
APA	Chen HD ,Liu HJ ,Liu JB ,Ming G ,&Huang BJ .(2007).Silicon light emitting devices in CMOS technology.chinese physics letters,24(1),265-267.
MLA	Chen HD ,et al."Silicon light emitting devices in CMOS technology".chinese physics letters 24.1(2007):265-267.