Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers
Peng, HL (Peng Hong-Ling) ; Han, Q (Han Qin) ; Yang, XH (Yang Xiao-Hong) ; Niu, ZC (Niu Zhi-Chuan)
刊名acta physica sinica
2007
卷号56期号:2页码:863-870
关键词quantum dots
ISSN号issn: 1000-3290
通讯作者peng, hl, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要some important parameters, such as gain, 3 db bandwidth and threshold current of 1.3 mu m quantum dot vertical-cavity surface-emitting laser (qd vcsel) are theoretically investigated. some methods are developed to improve the vcsel's modulation response. significant improvement are prediced for p-type modulation doping. in connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped dbr is much better suited to high speed quantum dot vcsels. the parasitic effects of the vcsel are,analyzed and the influence of packaging of the vcsel on its modulation responds is analyzed.
学科主题半导体物理
收录类别SCI
语种中文
公开日期2010-03-29
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/9672]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Peng, HL ,Han, Q ,Yang, XH ,et al. Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers[J]. acta physica sinica,2007,56(2):863-870.
APA Peng, HL ,Han, Q ,Yang, XH ,&Niu, ZC .(2007).Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers.acta physica sinica,56(2),863-870.
MLA Peng, HL ,et al."Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers".acta physica sinica 56.2(2007):863-870.
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