Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy

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	Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy
	Hao RT (Hao Ruiting) ; Xu YQ (Xu Yingqiang) ; Zhou ZQ (Zhou Zhiqiang) ; Ren ZW (Ren Zhengwei) ; Ni HQ (Ni Haiqiao) ; He ZH (He Zhenhong) ; Niu ZC (Niu, Zhichuan)
刊名	journal of physics d-applied physics
	2007
卷号	40 期号:4 页码:1080-1084
关键词	INFRARED PHOTODIODES
ISSN号	issn: 0022-3727
通讯作者	niu, zc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn
中文摘要	gasb 1 mu m-thick layers were grown by molecular beam epitaxy on gaas (001). the effects of the growth conditions on the crystalline quality, surface morphology, electrical properties and optical properties were studied by double crystalline x-ray diffraction, atomic force microscopy, hall measurement and photoluminescence spectroscopy, respectively. it was found that the surface roughness and hole mobility are highly dependent on the antimony-to-gallium flux ratios and growth temperatures. the crystalline quality, electrical properties and optical properties of gasb layers were also studied as functions of growth rate, and it was found that a suitably low growth rate is beneficial for the crystalline quality and electrical and optical properties. better crystal quality gasb layers with a minimum root mean square surface roughness of 0.1 nm and good optical properties were obtained at a growth rate of 0.25 mu m h(-1).
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9558]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Hao RT ,Xu YQ ,Zhou ZQ ,et al. Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy[J]. journal of physics d-applied physics,2007,40(4):1080-1084.
APA	Hao RT .,Xu YQ .,Zhou ZQ .,Ren ZW .,Ni HQ .,...&Niu ZC .(2007).Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy.journal of physics d-applied physics,40(4),1080-1084.
MLA	Hao RT ,et al."Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy".journal of physics d-applied physics 40.4(2007):1080-1084.