Quantum mechanical effects in nanometer field effect transistors

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	Quantum mechanical effects in nanometer field effect transistors
	Luo, JW (Luo, Jun-Wei) ; Li, SS (Li, Shu-Shen) ; Xia, JB (Xia, Jian-Bai) ; Wang, LW (Wang, Lin-Wang)
刊名	applied physics letters
	2007
卷号	90 期号:14 页码:art.no.143108
关键词	PARTICLE POINT
ISSN号	issn: 0003-6951
通讯作者	luo, jw, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lwwang@lbl.gov
中文摘要	the atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide-semiconductor field-effect transistors (mosfets) are presented. when compared with semiclassical thomas-fermi simulation results, there are significant differences in i-v curve, electron threshold voltage, and gate capacitance. in many aspects, the quantum mechanical effects exacerbate the problems encountered during device minimization, and it also presents different mechanisms in controlling the behaviors of a nanometer device than the classical one. (c) 2007 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9548]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo, JW ,Li, SS ,Xia, JB ,et al. Quantum mechanical effects in nanometer field effect transistors[J]. applied physics letters,2007,90(14):art.no.143108.
APA	Luo, JW ,Li, SS ,Xia, JB ,&Wang, LW .(2007).Quantum mechanical effects in nanometer field effect transistors.applied physics letters,90(14),art.no.143108.
MLA	Luo, JW ,et al."Quantum mechanical effects in nanometer field effect transistors".applied physics letters 90.14(2007):art.no.143108.