Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors
	Zhang WC (Zhang Wancheng) ; Nishiguchi K (Nishiguchi Katsuhiko) ; Ono Y (Ono Yukinori) ; Fujiwara A (Fujiwara Akira) ; Yamaguchi H (Yamaguchi Hiroshi) ; Inokawa H (Inokawa Hiroshi) ; Takahashi Y (Takahashi Yasuo) ; Wu, NJ (Wu, Nan-Jian)
刊名	ieice transactions on electronics
	2007
卷号	e90c 期号:5 页码:943-948
关键词	single-electron
ISSN号	issn: 0916-8524
通讯作者	zhang, wc, ntt, basic res labs, atsugi, kanagawa 2430198, japan. 电子邮箱地址: knishi50@aecl.ntt.co.jp
中文摘要	a single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. the turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (mosfets) alternately, allows current quantization at 20 k due to single-electron transfer. another mosfet is placed at the drain side of the turnstile to form an electron storage island. therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. the correspondence between the quantized current and the single-electron counting was confirmed.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9426]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang WC ,Nishiguchi K ,Ono Y ,et al. Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors[J]. ieice transactions on electronics,2007,e90c(5):943-948.
APA	Zhang WC .,Nishiguchi K .,Ono Y .,Fujiwara A .,Yamaguchi H .,...&Wu, NJ .(2007).Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors.ieice transactions on electronics,e90c(5),943-948.
MLA	Zhang WC ,et al."Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors".ieice transactions on electronics e90c.5(2007):943-948.