Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants
	Xu Q (Xu Qiang) ; Luo JW (Luo Jun-Wei) ; Li SS (Li Shu-Shen) ; Xia JB (Xia Jian-Bai) ; Li JB (Li Jingbo) ; Wei SH (Wei Su-Huai)
刊名	physical review b
	2007
卷号	75 期号:23 页码:art.no.235304
关键词	POROUS SILICON
ISSN号	issn: 1098-0121
通讯作者	li, jb, acad sinica, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要	using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-iii and group-v impurities doped in h passivated si quantum dots (qds) as functions of the qd size. the general chemical trends found in the qds are similar to that found in bulk si. we show that defect formation energy and transition energy level increase when the size of the qd decreases; thus, doping in small si qds becomes more difficult. b-si has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the h passivated si qd. on the other hand, p-si has the smallest donor ionization energy, and it prefers to stay at the interior of the h passivated si qd. we explained the general chemical trends and the dependence on the qd size in terms of the atomic chemical potentials and quantum confinement effects.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9366]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu Q ,Luo JW ,Li SS ,et al. Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants[J]. physical review b,2007,75(23):art.no.235304.
APA	Xu Q ,Luo JW ,Li SS ,Xia JB ,Li JB ,&Wei SH .(2007).Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants.physical review b,75(23),art.no.235304.
MLA	Xu Q ,et al."Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants".physical review b 75.23(2007):art.no.235304.