Effect of heavy boron doping on the electrical characteristics of SiGeHBTs

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Effect of heavy boron doping on the electrical characteristics of SiGeHBTs
	Yao F (Yao Fei) ; Xue CL (Xue Chun-Lai) ; Cheng BW (Cheng Bu-Wen) ; Wang QM (Wang Qi-Ming)
刊名	semiconductor science and technology
	2007
卷号	22 期号:8 页码:890-895
关键词	HETEROJUNCTION BIPOLAR-TRANSISTORS
ISSN号	issn: 0268-1242
通讯作者	yao, f, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: sindy-yf@semi.ac.cn
中文摘要	a modified version of the jain-roulston (j-r) model is developed that takes into account the compensation effect of b to ge in strained sige layers for the first time. based on this new model, the distribution of the bandgap narrowing (bgn) between the conduction and valence bands is calculated. the influence of this distribution on the transport characteristics of abrupt sige heterojunction bipolar transistors (hbts) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. the results show that our modified j-r model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics.
英文摘要	a modified version of the jain-roulston (j-r) model is developed that takes into account the compensation effect of b to ge in strained sige layers for the first time. based on this new model, the distribution of the bandgap narrowing (bgn) between the conduction and valence bands is calculated. the influence of this distribution on the transport characteristics of abrupt sige heterojunction bipolar transistors (hbts) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. the results show that our modified j-r model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics.; 于2010-03-29批量导入; 于2010-03-29批量导入; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9364]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yao F ,Xue CL ,Cheng BW ,et al. Effect of heavy boron doping on the electrical characteristics of SiGeHBTs[J]. semiconductor science and technology,2007,22(8):890-895.
APA	Yao F ,Xue CL ,Cheng BW ,&Wang QM .(2007).Effect of heavy boron doping on the electrical characteristics of SiGeHBTs.semiconductor science and technology,22(8),890-895.
MLA	Yao F ,et al."Effect of heavy boron doping on the electrical characteristics of SiGeHBTs".semiconductor science and technology 22.8(2007):890-895.