Plasmons in vertically coupled InAs/GaAs quantum dots

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Plasmons in vertically coupled InAs/GaAs quantum dots
	Kang, TT (Kang, Ting-Ting)
刊名	physical review b
	2007
卷号	76 期号:7 页码:art.no.075345
关键词	SEMICONDUCTOR STRUCTURES
ISSN号	issn: 1098-0121
通讯作者	kang, tt, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ktt219@163.com
中文摘要	we investigate plasmon excitations in a quantum wire that consists of an infinite one-dimensional array of vertically coupled inas/gaas strained quantum dots (qds). the research is carried out in the framework of random-phase approximation using effective-mass theory. our formalism is capable of studying plasmons with strong tunneling among qds, which frustrate the conventionally adopted tight-binding approximation. based on this formalism, a systematic study on the intraminiband or intrasubband plasmon in vertically coupled inas/gaas strained qds is presented. it is found that an increase of the dot spacing will inevitably reduce the plasmon energy. in contrast, the role of dot height is relatively complex and depends on the dot spacing. the results demonstrate the possibility to engineer collective excitations in low dimensional systems by simply changing their geometric configuration.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9276]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kang, TT . Plasmons in vertically coupled InAs/GaAs quantum dots[J]. physical review b,2007,76(7):art.no.075345.
APA	Kang, TT .(2007).Plasmons in vertically coupled InAs/GaAs quantum dots.physical review b,76(7),art.no.075345.
MLA	Kang, TT ."Plasmons in vertically coupled InAs/GaAs quantum dots".physical review b 76.7(2007):art.no.075345.