Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer

	Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer
	Li, Panpan ; Li, Hongjian ; Zhang, Yiyun ; Li, Zhicong ; Liang, Meng ; Li, Jing ; Wang, Guohong
刊名	journal of semiconductors
	2012
卷号	33 期号:10 页码:104002
学科主题	半导体器件
收录类别	EI
语种	英语
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23990]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Li, Panpan,Li, Hongjian,Zhang, Yiyun,et al. Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer[J]. journal of semiconductors,2012,33(10):104002.
APA	Li, Panpan.,Li, Hongjian.,Zhang, Yiyun.,Li, Zhicong.,Liang, Meng.,...&Wang, Guohong.(2012).Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer.journal of semiconductors,33(10),104002.
MLA	Li, Panpan,et al."Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer".journal of semiconductors 33.10(2012):104002.