Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities

	Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities
	Peng, Y.S ; Xu, B ; Ye, X.L ; Jin, P ; Wang, Z.G
刊名	microelectronic engineering
	2012
卷号	93 页码:1-4
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24036]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Peng, Y.S,Xu, B,Ye, X.L,et al. Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities[J]. microelectronic engineering,2012,93:1-4.
APA	Peng, Y.S,Xu, B,Ye, X.L,Jin, P,&Wang, Z.G.(2012).Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities.microelectronic engineering,93,1-4.
MLA	Peng, Y.S,et al."Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities".microelectronic engineering 93(2012):1-4.