Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

	Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
	Zhang, Hongyi ; Chen, Yonghai ; Zhou, Guanyu ; Tang, Chenguang ; Wang, Zhanguo
刊名	nanoscale research letters
	2012
卷号	7
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24002]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhang, Hongyi,Chen, Yonghai,Zhou, Guanyu,et al. Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots[J]. nanoscale research letters,2012,7.
APA	Zhang, Hongyi,Chen, Yonghai,Zhou, Guanyu,Tang, Chenguang,&Wang, Zhanguo.(2012).Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots.nanoscale research letters,7.
MLA	Zhang, Hongyi,et al."Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots".nanoscale research letters 7(2012).