Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces

	Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces
	Li, Li-Gong ; Liu, Shu-Man ; Luo, Shuai ; Yang, Tao ; Wang, Li-Jun ; Liu, Feng-Qi ; Ye, Xiao-Ling ; Xu, Bo ; Wang, Zhan-Guo
刊名	nanoscale research letters
	2012
卷号	7 页码:160
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-05-07
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23961]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li, Li-Gong,Liu, Shu-Man,Luo, Shuai,et al. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces[J]. nanoscale research letters,2012,7:160.
APA	Li, Li-Gong.,Liu, Shu-Man.,Luo, Shuai.,Yang, Tao.,Wang, Li-Jun.,...&Wang, Zhan-Guo.(2012).Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces.nanoscale research letters,7,160.
MLA	Li, Li-Gong,et al."Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces".nanoscale research letters 7(2012):160.