Comparison of the properties of GaN grown on complex Si-based structures

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Comparison of the properties of GaN grown on complex Si-based structures
	Zhou, SQ ; Vantomme, A ; Zhang, BS ; Yang, H ; Wu, MF
刊名	applied physics letters
	2005
卷号	86 期号:8 页码:art.no.081912
关键词	CHEMICAL-VAPOR-DEPOSITION
ISSN号	0003-6951
通讯作者	vantomme, a, katholieke univ leuven, inst voor kern stralingsfys, b-3001 heverlee, belgium. 电子邮箱地址: andre.vantomme@fys.kuleuven.ac.be
中文摘要	with the aim of investigating the possible integration of optoelectronic devices, epitaxial gan layers have been grown on si(ill) semiconductor-on-insulator (soi) and on si/cosi2/si(111) using metalorganic chemical vapor deposition. the samples are found to possess a highly oriented wurtzite structure, a uniform thickness, and abrupt interfaces. the epitaxial orientation is determined as gan(0001)//si(111), gan[1120]//si[110], and gan[1010]//si[112], and the gan layer is tensilely strained in the direction parallel to the interface. according to rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of gan on si(111) soi is better than that of gan on silicide. room-temperature photoluminescence of gan/soi reveals a strong near-band-edge emission at 368 nm (3.37 ev) with a full width at half-maximum of 59 mev. (c) 2005 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8846]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou, SQ,Vantomme, A,Zhang, BS,et al. Comparison of the properties of GaN grown on complex Si-based structures[J]. applied physics letters,2005,86(8):art.no.081912.
APA	Zhou, SQ,Vantomme, A,Zhang, BS,Yang, H,&Wu, MF.(2005).Comparison of the properties of GaN grown on complex Si-based structures.applied physics letters,86(8),art.no.081912.
MLA	Zhou, SQ,et al."Comparison of the properties of GaN grown on complex Si-based structures".applied physics letters 86.8(2005):art.no.081912.