Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

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	Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique
	Dai L ; Liu SF ; Fu ZX ; You LP ; Zhu JJ ; Lin BX ; Zhang JC ; Qin GG
刊名	journal of chemical physics
	2005
卷号	122 期号:10 页码:art.no.104713
关键词	GALLIUM NITRIDE NANOWIRES
ISSN号	0021-9606
通讯作者	qin, gg, peking univ, sch phys, beijing 100871, peoples r china. 电子邮箱地址: qingg@pku.edu.cn
中文摘要	gan nanotip triangle pyramids were synthesized on 3c-sic epilayer via an isoelectronic in-doping technique. the synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. in (99.999%) and molten ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of si (111) wafer covered with 400-500 nm 3c-sic epilayer were used as the substrates. the products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, raman spectroscopy, and photoluminescence measurements. our results show that the as-synthesized gan pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8800]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Dai L,Liu SF,Fu ZX,et al. Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique[J]. journal of chemical physics,2005,122(10):art.no.104713.
APA	Dai L.,Liu SF.,Fu ZX.,You LP.,Zhu JJ.,...&Qin GG.(2005).Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique.journal of chemical physics,122(10),art.no.104713.
MLA	Dai L,et al."Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique".journal of chemical physics 122.10(2005):art.no.104713.