Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy
	Xu YQ; Niu ZC; Zhang W; Jiang DS; Han Q
刊名	acta physica sinica
	2005
卷号	54 期号:6 页码:2950-2954
关键词	molecular beam epitaxy
ISSN号	1000-3290
通讯作者	niu, zc, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn
中文摘要	photoluminescence study of (gaas1-xsbx/inyga1-yas)/gaas bilayer quantum wells (bqws) grown by molecular beam epitaxy (mbe) were carried out. temperature and excitation power dependent photoluminescence (pl) study indicated that the band alignment of the bqws is type - ii. the origin of the double-peak luminescence was discussed. under optimized growth conditions, the pl emission wavelength from the bqws has been extend up to 1.31 mu m with a single peak at room temperature.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8702]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu YQ,Niu ZC,Zhang W,et al. Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy[J]. acta physica sinica,2005,54(6):2950-2954.
APA	Xu YQ,Niu ZC,Zhang W,Jiang DS,&Han Q.(2005).Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy.acta physica sinica,54(6),2950-2954.
MLA	Xu YQ,et al."Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy".acta physica sinica 54.6(2005):2950-2954.