Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition

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	Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition
	Chen CL ; Chen NF ; Liu LF ; Wu JL ; Liu ZK ; Yang SY ; Chai CL
刊名	journal of crystal growth
	2005
卷号	279 期号:3-4 页码:272-275
关键词	X-ray diffraction
ISSN号	0022-0248
通讯作者	chen, cl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: clchen@red.semi.ac.cn
中文摘要	the ga1-xmnxsb samples were fabricated by the implantation of mn ions into gasb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. auger electron spectroscopy depth profile of the ga1-xmnxsb samples showed that the mn ions were successfully implanted into gasb substrate. clear double-crystal x-ray diffraction patterns of the ga1-xmnxsb samples indicate that the ga1-xmnxsb epilayers have the zinc-blende structure without detectable second phase. magnetic hysteresis-loop of the ga1-xmnxsb epilayers were obtained at room temperature (293 k) with alternating gradient magnetometry. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8686]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen CL,Chen NF,Liu LF,et al. Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition[J]. journal of crystal growth,2005,279(3-4):272-275.
APA	Chen CL.,Chen NF.,Liu LF.,Wu JL.,Liu ZK.,...&Chai CL.(2005).Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition.journal of crystal growth,279(3-4),272-275.
MLA	Chen CL,et al."Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition".journal of crystal growth 279.3-4(2005):272-275.