Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation

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	Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation
	Sun, MH ; Zhao, TX ; Jia, CY ; Xu, PS ; Lu, ED ; Hsu, CC ; Ji, H
刊名	applied surface science
	2005
卷号	249 期号:1-4 页码:340-345
关键词	X-ray photoelectron spectroscopy
ISSN号	0169-4332
通讯作者	ji, h, peking univ, sch phys, natl key lab mesoscop phys, beijing 100871, peoples r china. 电子邮箱地址: jihang@pku.edu.cn
中文摘要	the adsorption of k on the n-gaas(i 0 0) surface was investigated by x-ray photoelectron spectroscopy (xps) and synchrotron radiation photoemission spectroscopy (sr-pes). the ga3d and as3d core level was measured for clean and k adsorbed gaas(i 0 0) surface. the adsorption of k induced chemical reaction between k and as, and the k-as reactant formed when the k coverage theta > i ml. the chemical reaction between k and ga did not occur, but ga atoms were exchanged by k atoms. from the data of band bending, the schottky barrier is 0.70 ev. the fermi-level pinning was not caused by defect levels. the probable reason is that the dangling bonds of surface ga atoms were filled by the outer-shell electrons of k atoms, forming a half-filled surface state. the fermi-level pinning was caused by this half-filled surface state. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8634]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun, MH,Zhao, TX,Jia, CY,et al. Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation[J]. applied surface science,2005,249(1-4):340-345.
APA	Sun, MH.,Zhao, TX.,Jia, CY.,Xu, PS.,Lu, ED.,...&Ji, H.(2005).Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation.applied surface science,249(1-4),340-345.
MLA	Sun, MH,et al."Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation".applied surface science 249.1-4(2005):340-345.