1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

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	1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs
	Han, Q ; Yang, XH ; Niu, ZC ; Ni, HQ ; Xu, YQ ; Zhang, SY ; Du, Y ; Peng, LH ; Zhao, H ; Tong, CZ ; Wu, RH ; Wang, QM
刊名	applied physics letters
	2005
卷号	87 期号:11 页码:art.no.111105
关键词	QUANTUM-WELL LASERS
ISSN号	0003-6951
通讯作者	han, q, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: hanqin@red.semi.ac.cn
中文摘要	we report the design, growth, fabrication, and characterization of a gaas-based resonant-cavity-enhanced (rce) gainnas photodetector operating at 1.55 mu m. the structure of the device was designed using a transfer-matrix method (tmm). by optimizing the molecular-beam epitaxy growth conditions, six gainnas quantum wells were used as the absorption layers. twenty-five (25)- and 9-pair gaas/alas-distributed bragg reflectors were grown as the bottom and top mirrors. at 1.55 mu m, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. the dark current density was 3x10(-7) a/cm(2) at a bias of 0 v and 4.3x10(-5) a/cm(2) at a reverse bias of 5 v. the primary time response measurement shows that the device has a rise time of less than 800 ps. (c) 2005 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8528]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han, Q,Yang, XH,Niu, ZC,et al. 1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs[J]. applied physics letters,2005,87(11):art.no.111105.
APA	Han, Q.,Yang, XH.,Niu, ZC.,Ni, HQ.,Xu, YQ.,...&Wang, QM.(2005).1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs.applied physics letters,87(11),art.no.111105.
MLA	Han, Q,et al."1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs".applied physics letters 87.11(2005):art.no.111105.