Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R
	Zheng, K ; Ma, XY ; Lin, T ; Wang, J ; Liu, SP ; Zhang, GZ
刊名	chinese physics letters
	2005
卷号	22 期号:9 页码:2269-2272
关键词	QUANTUM-WELL
ISSN号	0256-307x
通讯作者	zheng, k, chinese acad sci, inst semicond, natl engn res ctr optoelect device, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhengkai@mail.semi.ac.cn
中文摘要	we investigate a new structure of high-power 660-nm algainp laser diodes. in the structure, a p-gaas layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. stable fundamental mode operation was achieved at up to 80 mw without kinks, and the maximum output power was 184 mw at 22 degrees c. the threshold current was 40 ma.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8522]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zheng, K,Ma, XY,Lin, T,et al. Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R[J]. chinese physics letters,2005,22(9):2269-2272.
APA	Zheng, K,Ma, XY,Lin, T,Wang, J,Liu, SP,&Zhang, GZ.(2005).Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R.chinese physics letters,22(9),2269-2272.
MLA	Zheng, K,et al."Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R".chinese physics letters 22.9(2005):2269-2272.