Luminescence temperature and pressure studies of Zn2SiO4 phosphors doped with Mn2+ and Eu3+ ions
Su FH ; Ma BS ; Ding K ; Li GH ; Wang SP ; Chen W ; Joly AG ; McCready DE
刊名journal of luminescence
2006
卷号116期号:1-2页码:117-126
关键词Zn2SiO4
ISSN号0022-2313
通讯作者su, fh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: sufuhai@hotmail.com ; ghli@red.semi.ac.cn ; wchen@nomadics.com
中文摘要zn2sio4:mn2+, zn2sio4:eu3+ and zn2sio4:mn2+ eu3+ phosphors were prepared by a sol-gel process and their luminescence spectra were investigated. the emission bands from intra-ion transitions of mn2+ and eu3+ samples were studied as a function of pressure. the pressure coefficient of mn2+ emission was found to be -25.3 +/- 0.5 and -28.5 +/- 0.9 mev/gpa for zn2sio4:mn2+ and zn2sio4:mn2+ eu3+, respectively. the eu3+ emission shows only weak pressure dependence. the pressure dependences of the mn2+ and eu3+ emissions in zn2sio4:mn2+ eu3+ are slightly different from that in zn2sio4:mn2+ and zn2sio4:eu3+ samples, which can be attributed to the co-doping of mn2+ and eu3+ ions. the mn2+ emission in the two samples, however, exhibits analogous temperature dependence and similar luminescence lifetimes, indicating no energy transfer from mn2+ to eu3+ occurs. (c) 2005 elsevier b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-17
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/8424]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Su FH,Ma BS,Ding K,et al. Luminescence temperature and pressure studies of Zn2SiO4 phosphors doped with Mn2+ and Eu3+ ions[J]. journal of luminescence,2006,116(1-2):117-126.
APA Su FH.,Ma BS.,Ding K.,Li GH.,Wang SP.,...&McCready DE.(2006).Luminescence temperature and pressure studies of Zn2SiO4 phosphors doped with Mn2+ and Eu3+ ions.journal of luminescence,116(1-2),117-126.
MLA Su FH,et al."Luminescence temperature and pressure studies of Zn2SiO4 phosphors doped with Mn2+ and Eu3+ ions".journal of luminescence 116.1-2(2006):117-126.
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