Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires | |
Cheng BC ; Wang ZG | |
刊名 | advanced functional materials |
2005 | |
卷号 | 15期号:11页码:1883-1890 |
关键词 | ONE-DIMENSIONAL NANOSTRUCTURES |
ISSN号 | 1616-301x |
通讯作者 | cheng, bc, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bcheng@vip.sina.com |
中文摘要 | quasi-aligned eu2+-doped wurtzite zns nanowires on au-coated si wafers have been successfully synthesized by a vapor deposition method under a weakly reducing atmosphere. compared with the undoped counterpart, incorporation of the dopant gives a modulated composition and crystal structure, which leads to a preferred growth of the nanowires along the [0110] direction and a high density of defects in the nanowire hosts. the ion doping causes intense fluorescence and persistent phosphorescence in zns nanowires. the dopant eu2+ ions form an isoelectronic acceptor level and yield a high density of bound excitions, which contribute to the appearance of the radiative recombination emission of the bound excitons and resonant raman scattering at higher pumping intensity. co-dopant cl- ions can serve not only as donors, producing a donor-acceptor pair transition with the eu2+ acceptor level, but can also form trap levels together with other defects, capture the photoionization electrons of eu2+, and yield long-lasting (about 4 min), green phosphorescence. with decreasing synthesis time, the existence of more surface states in the nanowires forms a higher density of trap centers and changes the crystal-field strength around eu2+. as a result, not only have an enhanced eu2+ -4f(6)5d(1)-4f(7) intra-ion transition and a prolonged afterglow time been more effectively observed (by decreasing the nanowires' diameters), but also the eu2+ related emissions are shifted to shorter wavelengths. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/8416] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Cheng BC,Wang ZG. Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires[J]. advanced functional materials,2005,15(11):1883-1890. |
APA | Cheng BC,&Wang ZG.(2005).Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires.advanced functional materials,15(11),1883-1890. |
MLA | Cheng BC,et al."Synthesis and optical properties of europium-doped ZnS: Long-lasting phosphorescence from aligned nanowires".advanced functional materials 15.11(2005):1883-1890. |
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