Instability of nitrogen doped Sb2Te3 for phase change memory application

	Instability of nitrogen doped Sb2Te3 for phase change memory application
	Li, XL ; Rao, F ; song, zt(重点实验室） ; Zhu, M ; Liu, WL ; Sun, ZM
刊名	JOURNAL OF APPLIED PHYSICS
	2011
卷号	110 期号:9 页码:94318
关键词	Physics Applied
ISSN号	0021-8979
学科主题	Physics
收录类别	SCI
原文出处	10.1063/1.3660705
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115529]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Li, XL,Rao, F,song, zt,et al. Instability of nitrogen doped Sb2Te3 for phase change memory application[J]. JOURNAL OF APPLIED PHYSICS,2011,110(9):94318.
APA	Li, XL,Rao, F,song, zt,Zhu, M,Liu, WL,&Sun, ZM.(2011).Instability of nitrogen doped Sb2Te3 for phase change memory application.JOURNAL OF APPLIED PHYSICS,110(9),94318.
MLA	Li, XL,et al."Instability of nitrogen doped Sb2Te3 for phase change memory application".JOURNAL OF APPLIED PHYSICS 110.9(2011):94318.